Hydrogen atom desorption induced by electron bombardment on si surface

W. Li, S. Sato, H. Akima, M. Sakuraba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-Terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.

Original languageEnglish
Title of host publicationSemiconductors, Metal Oxides, and Composites
Subtitle of host publicationMetallization and Electrodeposition of Thin Films and Nanostructures 3
EditorsP. M. Vereecken, G. Oskam, J. Fransaer
PublisherElectrochemical Society Inc.
Pages35-38
Number of pages4
Edition31
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015
EventSymposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Publication series

NameECS Transactions
Number31
Volume69
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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