@inproceedings{f1510a704b74410c8f33d4098c9afcbe,
title = "Hydrogen atom desorption induced by electron bombardment on si surface",
abstract = "In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-Terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.",
author = "W. Li and S. Sato and H. Akima and M. Sakuraba",
year = "2015",
doi = "10.1149/06931.0035ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "31",
pages = "35--38",
editor = "Vereecken, {P. M.} and G. Oskam and J. Fransaer",
booktitle = "Semiconductors, Metal Oxides, and Composites",
edition = "31",
note = "Symposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting ; Conference date: 11-10-2015 Through 15-10-2015",
}