TY - GEN
T1 - Hydrogen atom desorption induced by electron bombardment on si surface
AU - Li, W.
AU - Sato, S.
AU - Akima, H.
AU - Sakuraba, M.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-Terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.
AB - In this research, we aim at developing STM lithography with atomic resolution toward its application to quantum devices. First, we have confirmed successfully an atomically flat and hydrogen-Terminated surface of Si (111) required for the lithography after unisotropic chemical etching in aqueous NH4F solution with decreased dissolved oxygen. Next, we have studied hydrogen desorption from the surface by electron bombardment from an STM tip. It has been confirmed that desorption area increases approximately in proportion to the tunneling current.
UR - http://www.scopus.com/inward/record.url?scp=84959246497&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84959246497&partnerID=8YFLogxK
U2 - 10.1149/06931.0035ecst
DO - 10.1149/06931.0035ecst
M3 - Conference contribution
AN - SCOPUS:84959246497
T3 - ECS Transactions
SP - 35
EP - 38
BT - Semiconductors, Metal Oxides, and Composites
A2 - Fransaer, J.
A2 - Vereecken, P. M.
A2 - Oskam, G.
PB - Electrochemical Society Inc.
T2 - Symposium on Semiconductors, Metal Oxides, and Composites: Metallization and Electrodeposition of Thin Films and Nanostructures 3 - 228th ECS Meeting
Y2 - 11 October 2015 through 15 October 2015
ER -