Hydrogen adsorption and desorption processes on Si(100)

Miyako Terashi, Jyun ko Kuge, Masanori Shinohara, Daisei Shoji, Michio Niwano

Research output: Contribution to journalConference articlepeer-review

25 Citations (Scopus)

Abstract

The hydrogen adsorption and desorption processes on the Si(100)(2×1) surface were investigated using in-situ infrared absorption spectroscopy in the multiple internal reflection geometry. It is demonstrated that the distribution of hydride species (SiH, SiH2, and SiH3) significantly changes during adsorption of atomic hydrogen and desorption of molecular hydrogen. At the initial stages of hydrogen adsorption, the monohydride Si (Si-H) and dihydride Si (Si-H2) are populated, with Si-H being dominant. For higher hydrogen exposures the dihydride and trihydride Si are formed. Thermal annealing causes hydrogen to desorb from the hydride species. For annealing temperature up to approximately 400 °C, the trihydride Si is etched away, producing a H-terminated surface which consists of monohydride (SiH) and dihydride (SiH2) species. We demonstrate that the conversion from the monohydride to the dihydride phase occurs during thermal annealing.

Original languageEnglish
Pages (from-to)260-265
Number of pages6
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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