Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]

J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, Takashi Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, T. Yao

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Abstract

We observed that Cr doping introduces an electronic state in the band gap in Ga1-xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.

Original languageEnglish
Article number161315
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number16
DOIs
Publication statusPublished - 2004 Oct 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kim, J. J., Makino, H., Kobayashi, K., Takata, Y., Yamamoto, T., Hanada, T., Cho, M. W., Ikenaga, E., Yabashi, M., Miwa, D., Nishino, Y., Tamasaku, K., Ishikawa, T., Shin, S., & Yao, T. (2004). Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga1-xCrxN [20]. Physical Review B - Condensed Matter and Materials Physics, 70(16), 1-4. [161315]. https://doi.org/10.1103/PhysRevB.70.161315