We observed that Cr doping introduces an electronic state in the band gap in Ga1-xCrxN by using hard x-ray photoemission spectroscopy. Based on first-principles calculations, the electronic state is interpreted to be dominantly Ga 4s originated states. The chemical effect of Cr up to the second-nearest-neighbor Ga atoms has also been observed in the core-level spectra of Ga 2p3/2. The present results evidence that the Ga valence electrons are strongly affected by the second-nearest-neighbor Cr atoms through Cr 3d-Ga 4s hybridization.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2004 Oct 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics