It is shown that the alignment of the hybrid orbital energy, EHO is required at the heterojunction interfaces. The locations of Eho are tabulated for AlAs, GaP, GaAs, InP and InAs. The matching of EHO reproduces remarkably well the valence band discontinuity observed experimentally. An interpretation based on a simple thermodynamic consideration is given to explain why matching of EHO is required at the heterojunction interface, which involves inevitable formation of interface dipole as opposed to Tersoff’s quantum dipole theory.
ASJC Scopus subject areas
- Physics and Astronomy(all)