Hybrid isolation process with deep diffusion and V-groove for reverse blocking IGBTs

Haruo Nakazawa, Masaaki Ogino, Hiroki Wakimoto, Tsunehiro Nakajima, Yoshikazu Takahashi, David Hongfei Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

We newly developed a 1200V Reverse Blocking (RB)-IGBT used to form bi-directional switches in advanced Neutral-Point-Clamped (A-NPC) 3-Level modules. It featured a hybrid through-silicon isolation structure combining wafer front-side boron deep diffusion with back-side V-groove etching. Collector layer was implanted into the back-side and the surface of the V-grooves, and electrically connected to the front-side boron diffusion after activation to achieve reverse-blocking capability. Thermal budget for the surface deep boron diffusion was thereby shortened more than a half of that in full diffusion case to improve both throughput and yield. Sufficient reverse blocking capability was experimentally verified.

Original languageEnglish
Title of host publicationISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
Pages116-119
Number of pages4
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States
Duration: 2011 May 232011 May 26

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Other

Other23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
Country/TerritoryUnited States
CitySan Diego, CA
Period11/5/2311/5/26

ASJC Scopus subject areas

  • Engineering(all)

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