Hybrid AMR/PHR ring sensor

Sunjong Oh, P. B. Patil, Tran Quang Hung, Byunghwa Lim, Migaku Takahashi, Dong Young Kim, Cheolgi Kim

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)


The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.

Original languageEnglish
Pages (from-to)1248-1251
Number of pages4
JournalSolid State Communications
Issue number18
Publication statusPublished - 2011 Sep
Externally publishedYes


  • A. Magnetic films and multilayers
  • A. Thin film
  • D. Electronic transport

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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