Abstract
(1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 373-379 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 187 |
| Issue number | 3-4 |
| DOIs | |
| Publication status | Published - 1998 May 15 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Wang, J. F., Kikuchi, K., Koo, B. H., Ishikawa, Y., Uchida, W., & Isshiki, M. (1998). HWE growth and evaluation of CdTe epitaxial films on GaAs. Journal of Crystal Growth, 187(3-4), 373-379. https://doi.org/10.1016/S0022-0248(98)00022-0