TY - JOUR
T1 - HWE growth and evaluation of CdTe epitaxial films on GaAs
AU - Wang, J. F.
AU - Kikuchi, K.
AU - Koo, B. H.
AU - Ishikawa, Y.
AU - Uchida, W.
AU - Isshiki, M.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1998/5/15
Y1 - 1998/5/15
N2 - (1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.
AB - (1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.
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U2 - 10.1016/S0022-0248(98)00022-0
DO - 10.1016/S0022-0248(98)00022-0
M3 - Article
AN - SCOPUS:0032474166
VL - 187
SP - 373
EP - 379
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -