HWE growth and evaluation of CdTe epitaxial films on GaAs

J. F. Wang, K. Kikuchi, B. H. Koo, Y. Ishikawa, W. Uchida, M. Isshiki

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

(1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.

Original languageEnglish
Pages (from-to)373-379
Number of pages7
JournalJournal of Crystal Growth
Volume187
Issue number3-4
DOIs
Publication statusPublished - 1998 May 15

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'HWE growth and evaluation of CdTe epitaxial films on GaAs'. Together they form a unique fingerprint.

  • Cite this

    Wang, J. F., Kikuchi, K., Koo, B. H., Ishikawa, Y., Uchida, W., & Isshiki, M. (1998). HWE growth and evaluation of CdTe epitaxial films on GaAs. Journal of Crystal Growth, 187(3-4), 373-379. https://doi.org/10.1016/S0022-0248(98)00022-0