HWE growth and evaluation of CdTe epitaxial films on GaAs

J. F. Wang, K. Kikuchi, B. H. Koo, Y. Ishikawa, W. Uchida, M. Isshiki

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17 Citations (Scopus)


(1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.

Original languageEnglish
Pages (from-to)373-379
Number of pages7
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 1998 May 15

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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