HWE growth and evaluation of CdTe epitaxial films on GaAs

J. F. Wang; K. Kikuchi; B. H. Koo; Y. Ishikawa; W. Uchida; M. Isshiki

doi:10.1016/S0022-0248(98)00022-0

HWE growth and evaluation of CdTe epitaxial films on GaAs

J. F. Wang, K. Kikuchi, B. H. Koo, Y. Ishikawa, W. Uchida, M. Isshiki

ENG - Materials Processing

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

(1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.

Original language	English
Pages (from-to)	373-379
Number of pages	7
Journal	Journal of Crystal Growth
Volume	187
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(98)00022-0
Publication status	Published - 1998 May 15

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00022-0

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title = "HWE growth and evaluation of CdTe epitaxial films on GaAs",

abstract = "(1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.",

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T1 - HWE growth and evaluation of CdTe epitaxial films on GaAs

AU - Wang, J. F.

AU - Kikuchi, K.

AU - Koo, B. H.

AU - Ishikawa, Y.

AU - Uchida, W.

AU - Isshiki, M.

PY - 1998/5/15

Y1 - 1998/5/15

N2 - (1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.

AB - (1 0 0)CdTe epitaxial films were grown on semi-insulating (1 0 0)GaAs substrates in order to determine optimum growth conditions by the hot wall epitaxy (HWE) technique. Further, CdTe epitaxial films with thicknesses of 0.84-14.9 μm were grown under determined optimum growth conditions for studying the effect of the thickness on crystalline quality. The low-temperature photoluminescence (PL) and X-ray diffraction (XRD) were used to evaluate the grown films. The results indicate that the density of extended defects in CdTe films decreases rapidly within 5 μm with the increase of thickness, and that high-quality CdTe epitaxial films on GaAs can be obtained at a thickness of over 10 μm. Several emission origins in PL are also discussed.

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HWE growth and evaluation of CdTe epitaxial films on GaAs

Abstract

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