HVPE growth of semi-polar (1 1 2̄ 2)GaN on GaN template (1 1 3)Si substrate

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi, N. Sawaki

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16 Citations (Scopus)

Abstract

The hydride-vapour-phase-epitaxial (HVPE) growth of semi-polar (1 1 2̄ 2)GaN is attempted on a GaN template layer grown on a patterned (1 1 3) Si substrate. It is found that the chemical reaction between the GaN grown layer and the Si substrate during the growth is suppressed substantially by lowering the growth temperatures no higher than 900 °C. And the surface morphology is improved by decreasing the V/III ratio. It is shown that a 230-μm-thick (1 1 2̄ 2)GaN with smooth surface is obtained at a growth temperature of 870 °C with V/III of 14.

Original languageEnglish
Pages (from-to)2875-2878
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number10
DOIs
Publication statusPublished - 2009 May 1

Keywords

  • A2. Single crystal growth
  • A3. Hydride vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Suzuki, N., Uchida, T., Tanikawa, T., Hikosaka, T., Honda, Y., Yamaguchi, M., & Sawaki, N. (2009). HVPE growth of semi-polar (1 1 2̄ 2)GaN on GaN template (1 1 3)Si substrate. Journal of Crystal Growth, 311(10), 2875-2878. https://doi.org/10.1016/j.jcrysgro.2009.01.033