HVPE growth of a-plane GaN on a GaN template (110)Si substrate

Tomoyuki Tanikawa; Noriyuki Suzuki; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki

doi:10.1002/pssc.200983563

HVPE growth of a-plane GaN on a GaN template (110)Si substrate

Tomoyuki Tanikawa, Noriyuki Suzuki, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

HVPE growth of a-plane (11-20)GaN was demonstrated. GaN growth was initiated from template GaN stripes, and each GaN stripes coalesced to get uniform crystal. At conventional growth temperature of 1000 °C, melt back etching was observed in GaN and surface morphology was poor. By lowering growth temperature to 870 °C, this phenomenon did not occur and morphology was also improved. NH3 flow rate was not effective on the morphology. RMS value was 0.78 nm to show the stability of the formation of surface. The dark spot density was as low as 10⁷ cm^-2. We found that most of dislocations were attributed to the coalescence of template stripes. CL spectrum showed the strong DBE peak. DAP emission and yellow luminescence were much weaker than DBE peak.

Original language	English
Pages (from-to)	1760-1763
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983563
Publication status	Published - 2010
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 2009 Oct 18 → 2009 Oct 23

Keywords

Cathodoluminescence
Dislocations
GaN
Growth
Morphology
VPE

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200983563

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title = "HVPE growth of a-plane GaN on a GaN template (110)Si substrate",

abstract = "HVPE growth of a-plane (11-20)GaN was demonstrated. GaN growth was initiated from template GaN stripes, and each GaN stripes coalesced to get uniform crystal. At conventional growth temperature of 1000 °C, melt back etching was observed in GaN and surface morphology was poor. By lowering growth temperature to 870 °C, this phenomenon did not occur and morphology was also improved. NH3 flow rate was not effective on the morphology. RMS value was 0.78 nm to show the stability of the formation of surface. The dark spot density was as low as 107 cm-2. We found that most of dislocations were attributed to the coalescence of template stripes. CL spectrum showed the strong DBE peak. DAP emission and yellow luminescence were much weaker than DBE peak.",

keywords = "Cathodoluminescence, Dislocations, GaN, Growth, Morphology, VPE",

author = "Tomoyuki Tanikawa and Noriyuki Suzuki and Yoshio Honda and Masahito Yamaguchi and Nobuhiko Sawaki",

year = "2010",

doi = "10.1002/pssc.200983563",

language = "English",

volume = "7",

pages = "1760--1763",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

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number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

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TY - JOUR

T1 - HVPE growth of a-plane GaN on a GaN template (110)Si substrate

AU - Tanikawa, Tomoyuki

AU - Suzuki, Noriyuki

AU - Honda, Yoshio

AU - Yamaguchi, Masahito

AU - Sawaki, Nobuhiko

PY - 2010

Y1 - 2010

N2 - HVPE growth of a-plane (11-20)GaN was demonstrated. GaN growth was initiated from template GaN stripes, and each GaN stripes coalesced to get uniform crystal. At conventional growth temperature of 1000 °C, melt back etching was observed in GaN and surface morphology was poor. By lowering growth temperature to 870 °C, this phenomenon did not occur and morphology was also improved. NH3 flow rate was not effective on the morphology. RMS value was 0.78 nm to show the stability of the formation of surface. The dark spot density was as low as 107 cm-2. We found that most of dislocations were attributed to the coalescence of template stripes. CL spectrum showed the strong DBE peak. DAP emission and yellow luminescence were much weaker than DBE peak.

AB - HVPE growth of a-plane (11-20)GaN was demonstrated. GaN growth was initiated from template GaN stripes, and each GaN stripes coalesced to get uniform crystal. At conventional growth temperature of 1000 °C, melt back etching was observed in GaN and surface morphology was poor. By lowering growth temperature to 870 °C, this phenomenon did not occur and morphology was also improved. NH3 flow rate was not effective on the morphology. RMS value was 0.78 nm to show the stability of the formation of surface. The dark spot density was as low as 107 cm-2. We found that most of dislocations were attributed to the coalescence of template stripes. CL spectrum showed the strong DBE peak. DAP emission and yellow luminescence were much weaker than DBE peak.

KW - Cathodoluminescence

KW - Dislocations

KW - GaN

KW - Growth

KW - Morphology

KW - VPE

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DO - 10.1002/pssc.200983563

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7-8

T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

HVPE growth of a-plane GaN on a GaN template (110)Si substrate

Abstract

Keywords

ASJC Scopus subject areas

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