Abstract
Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al-O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spinpolarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.
| Original language | English |
|---|---|
| Pages (from-to) | L1100-L1102 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 44 |
| Issue number | 33-36 |
| DOIs | |
| Publication status | Published - 2005 Aug 26 |
Keywords
- Half-metal
- Heusler alloy
- Magnetic tunnel junction
- Spin-polarization
- Tunnel magnetoresistance
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Sakuraba, Y., Nakata, J., Oogane, M., Kubota, H., Ando, Y., Sakuma, A., & Miyazaki, T. (2005). Huge spin-polarization of L21-ordered Co2MnSi epitaxial heusler alloy film. Japanese Journal of Applied Physics, Part 2: Letters, 44(33-36), L1100-L1102. https://doi.org/10.1143/JJAP.44.L1100