Huge spin-polarization of L21-ordered Co2MnSi epitaxial heusler alloy film

Yuya Sakuraba; Jun Nakata; Mikihiko Oogane; Hitoshi Kubota; Yasuo Ando; Akimasa Sakuma; Terunobu Miyazaki

doi:10.1143/JJAP.44.L1100

Huge spin-polarization of L2₁-ordered Co₂MnSi epitaxial heusler alloy film

Yuya Sakuraba, Jun Nakata, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

185 Citations (Scopus)

Abstract

Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co₂MnSi/Al-O barrier/poly-crystalline Co₇₅Fe₂₅ were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co₂MnSi bottom electrode exhibited highly ordered L2₁ structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spinpolarization of 0.89 at 2 K for Co₂MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.

Original language	English
Pages (from-to)	L1100-L1102
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	33-36
DOIs	https://doi.org/10.1143/JJAP.44.L1100
Publication status	Published - 2005 Aug 26

Keywords

Half-metal
Heusler alloy
Magnetic tunnel junction
Spin-polarization
Tunnel magnetoresistance

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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10.1143/JJAP.44.L1100

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title = "Huge spin-polarization of L21-ordered Co2MnSi epitaxial heusler alloy film",

abstract = "Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al-O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spinpolarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.",

keywords = "Half-metal, Heusler alloy, Magnetic tunnel junction, Spin-polarization, Tunnel magnetoresistance",

author = "Yuya Sakuraba and Jun Nakata and Mikihiko Oogane and Hitoshi Kubota and Yasuo Ando and Akimasa Sakuma and Terunobu Miyazaki",

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T1 - Huge spin-polarization of L21-ordered Co2MnSi epitaxial heusler alloy film

AU - Sakuraba, Yuya

AU - Nakata, Jun

AU - Oogane, Mikihiko

AU - Kubota, Hitoshi

AU - Ando, Yasuo

AU - Sakuma, Akimasa

AU - Miyazaki, Terunobu

PY - 2005/8/26

Y1 - 2005/8/26

N2 - Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al-O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spinpolarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.

AB - Magnetic tunnel junctions (MTJs) with a stacking structure of epitaxial Co2MnSi/Al-O barrier/poly-crystalline Co75Fe25 were fabricated using an ultrahigh vacuum sputtering system. The epitaxial Co2MnSi bottom electrode exhibited highly ordered L21 structure and very smooth surface morphology. Observed magnetoresistance (MR) ratios of 70% at room temperature (RT) and 159% at 2 K are the highest values to date for MTJs using a Heusler alloy electrode. A high spinpolarization of 0.89 at 2 K for Co2MnSi obtained from Julliere's model coincided with the half-metallic band structure that was predicted by theoretical calculations.

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KW - Spin-polarization

KW - Tunnel magnetoresistance

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