Abstract
Hydrogen desorption kinetics from a Si(100) surface grown by gas-source molecular beam epitaxy (GSMBE) using either silane or disilane has been studied with temperature-programmed-desorption (TPD) measurements. For each source gas, a series of TPD spectra was obtained from surfaces quenched from the growth at various temperatures. The TPD spectra from disilane-GSMBE-grown surfaces showed no shift in the peak temperature, while those from the silane-grown surfaces showed a peak shift towards higher temperatures by 25°C at hydrogen coverages below 0.3 ML. This shift, indicative of the presence of higher-order desorption kinetics, suggests a more isolated configuration of the adsorbed hydrogen on the silane-grown surfaces. Difference in the growth kinetics between silane and disilane is also discussed.
Original language | English |
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Pages (from-to) | 555-559 |
Number of pages | 5 |
Journal | Surface Science |
Volume | 357-358 |
DOIs | |
Publication status | Published - 1996 Jun 20 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry