H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE

M. Suemitsu, H. Nakazawa, N. Miyamoto

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13 Citations (Scopus)

Abstract

Hydrogen desorption kinetics from a Si(100) surface grown by gas-source molecular beam epitaxy (GSMBE) using either silane or disilane has been studied with temperature-programmed-desorption (TPD) measurements. For each source gas, a series of TPD spectra was obtained from surfaces quenched from the growth at various temperatures. The TPD spectra from disilane-GSMBE-grown surfaces showed no shift in the peak temperature, while those from the silane-grown surfaces showed a peak shift towards higher temperatures by 25°C at hydrogen coverages below 0.3 ML. This shift, indicative of the presence of higher-order desorption kinetics, suggests a more isolated configuration of the adsorbed hydrogen on the silane-grown surfaces. Difference in the growth kinetics between silane and disilane is also discussed.

Original languageEnglish
Pages (from-to)555-559
Number of pages5
JournalSurface Science
Volume357-358
DOIs
Publication statusPublished - 1996 Jun 20

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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