HRTEM investigation of effect of various rare earth oxide dopants on epitaxial zirconia high-k gate dielectrics

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics were examined. The width of the hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V. HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about Inm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

Original languageEnglish
Pages (from-to)361-366
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume745
Publication statusPublished - 2002 Dec 1
Externally publishedYes
EventNovel Materials and Processes for Advanced CMOS - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 4

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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