HREM analysis of ultra-thin oxides (Invited)

R. Sinclair, M. Niwa, T. Kouzaki

Research output: Contribution to conferencePaperpeer-review

Abstract

Ultra-thin SiO2 layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustrated here for gate oxides and tunneling oxides.

Original languageEnglish
Pages739-741
Number of pages3
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 1995 Oct 241995 Oct 28

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period95/10/2495/10/28

ASJC Scopus subject areas

  • Engineering(all)

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