TY - JOUR
T1 - How the electronic structure in URu2Si2 changes with temperature
T2 - A high-resolution Compton scattering study
AU - Koizumi, Akihisa
AU - Kubo, Yasunori
AU - Motoyama, Gaku
AU - Yamamura, Tomoo
AU - Sakurai, Yoshiharu
N1 - Funding Information:
The synchrotron radiation experiments were performed with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal Nos. 2011A1499, 2012A1373, and 2012B1422). This work was supported by JSPS KAKENHI Grant Number 24540382 and also performed under the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 11K0055).
Funding Information:
Acknowledgements The synchrotron radiation experiments were performed with the approval of the Japan Synchrotron Radiation Research Institute (JASRI) (Proposal Nos. 2011A1499, 2012A1373, and 2012B1422). This work was supported by JSPS KAKENHI Grant Number 24540382 and also performed under the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 11K0055).
Publisher Copyright:
© 2018 The Physical Society of Japan.
PY - 2018
Y1 - 2018
N2 - We have measured directional Compton profiles on the (001) plane in URu2Si2 single crystal at several temperatures. Two-dimensional electron occupation number densities (2D-EONDs) were obtained from the profiles through electron momentum reconstruction and Lock–Crisp–West folding analyses. We have also performed band calculations based on 5 f-electron itinerant and localized models and derived theoretical 2D-EONDs for comparison. The experimental 2D-EOND at 300 K is well described by the localized model, and the 2D-EOND at 10 K is consistent with the theoretical one based on the itinerant model. The difference between 2D-EONDs at 30 and 100 K reflects a gradual change in the electronic structure, which reveals some of the crossover phenomena from localized to itinerant states. The change from localized to itinerant states is also reflected in a B(r) function, which is obtained in the reconstruction analysis and is an autocorrelation function of the wave function in the position space. The process by which the electronic structure in URu2Si2 changes is demonstrated through a series of experimental results.
AB - We have measured directional Compton profiles on the (001) plane in URu2Si2 single crystal at several temperatures. Two-dimensional electron occupation number densities (2D-EONDs) were obtained from the profiles through electron momentum reconstruction and Lock–Crisp–West folding analyses. We have also performed band calculations based on 5 f-electron itinerant and localized models and derived theoretical 2D-EONDs for comparison. The experimental 2D-EOND at 300 K is well described by the localized model, and the 2D-EOND at 10 K is consistent with the theoretical one based on the itinerant model. The difference between 2D-EONDs at 30 and 100 K reflects a gradual change in the electronic structure, which reveals some of the crossover phenomena from localized to itinerant states. The change from localized to itinerant states is also reflected in a B(r) function, which is obtained in the reconstruction analysis and is an autocorrelation function of the wave function in the position space. The process by which the electronic structure in URu2Si2 changes is demonstrated through a series of experimental results.
UR - http://www.scopus.com/inward/record.url?scp=85046961724&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85046961724&partnerID=8YFLogxK
U2 - 10.7566/JPSJ.87.064703
DO - 10.7566/JPSJ.87.064703
M3 - Article
AN - SCOPUS:85046961724
VL - 87
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 6
M1 - 064703
ER -