Hot electron injection characteristics in asymmetrically structured submicron MOSFETs

Naoko Okabe; Hiroshi Takato; Yukihito Oowaki; Takeshi Hamamoto; Akihiro Nitayama

doi:10.1143/JJAP.28.L21

Hot electron injection characteristics in asymmetrically structured submicron MOSFETs

Naoko Okabe, Hiroshi Takato, Yukihito Oowaki, Takeshi Hamamoto, Akihiro Nitayama

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

Abstract

Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.

Original language	English
Pages (from-to)	L21-L23
Journal	Japanese journal of applied physics
Volume	28
Issue number	1 A
DOIs	https://doi.org/10.1143/JJAP.28.L21
Publication status	Published - 1989 Jan

Keywords

Asymmetric source/drain structure
Gate current
Hot-electron injection
Impact ionization
LDD
MOSFET

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.28.L21

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title = "Hot electron injection characteristics in asymmetrically structured submicron MOSFETs",

abstract = "Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.",

keywords = "Asymmetric source/drain structure, Gate current, Hot-electron injection, Impact ionization, LDD, MOSFET",

author = "Naoko Okabe and Hiroshi Takato and Yukihito Oowaki and Takeshi Hamamoto and Akihiro Nitayama",

year = "1989",

month = jan,

doi = "10.1143/JJAP.28.L21",

language = "English",

volume = "28",

pages = "L21--L23",

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T1 - Hot electron injection characteristics in asymmetrically structured submicron MOSFETs

AU - Okabe, Naoko

AU - Takato, Hiroshi

AU - Oowaki, Yukihito

AU - Hamamoto, Takeshi

AU - Nitayama, Akihiro

PY - 1989/1

Y1 - 1989/1

N2 - Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.

AB - Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.

KW - Asymmetric source/drain structure

KW - Gate current

KW - Hot-electron injection

KW - Impact ionization

KW - LDD

KW - MOSFET

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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