Hot electron injection characteristics in asymmetrically structured submicron MOSFETs

Naoko Okabe, Hiroshi Takato, Yukihito Oowaki, Takeshi Hamamoto, Akihiro Nitayama

Research output: Contribution to journalArticle

Abstract

Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.

Original languageEnglish
Pages (from-to)L21-L23
JournalJapanese journal of applied physics
Volume28
Issue number1 A
DOIs
Publication statusPublished - 1989 Jan

Keywords

  • Asymmetric source/drain structure
  • Gate current
  • Hot-electron injection
  • Impact ionization
  • LDD
  • MOSFET

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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