Abstract
Gate current and substrate current characteristics of submicron NMOSFET with asymmetrical lightly doped drain (LDD) structures are studied. It is newly found that the gate current also has a double-hump phenomenon, as does the substrate current. This new phenomenon can be estimated from impact ionization and the hot-electron emission mechanism. Furthermore, it is newly clarified that the threshold voltage shift after DC stress can be well explained by the gate current over the whole range of stress conditions.
| Original language | English |
|---|---|
| Pages (from-to) | L21-L23 |
| Journal | Japanese journal of applied physics |
| Volume | 28 |
| Issue number | 1 A |
| DOIs | |
| Publication status | Published - 1989 Jan |
Keywords
- Asymmetric source/drain structure
- Gate current
- Hot-electron injection
- Impact ionization
- LDD
- MOSFET
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Okabe, N., Takato, H., Oowaki, Y., Hamamoto, T., & Nitayama, A. (1989). Hot electron injection characteristics in asymmetrically structured submicron MOSFETs. Japanese journal of applied physics, 28(1 A), L21-L23. https://doi.org/10.1143/JJAP.28.L21