Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering