Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's

Mitsumasa Koyanagi, Alan G. Lewis, Russel A. Martin, Tiao Yuan Huang, John Y. Chen

Research output: Contribution to journalArticlepeer-review

111 Citations (Scopus)


Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.

Original languageEnglish
Pages (from-to)839-844
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 1987 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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