Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's

Mitsumasa Koyanagi; Alan G. Lewis; Russel A. Martin; Tiao Yuan Huang; John Y. Chen

doi:10.1109/T-ED.1987.23004

Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's

Mitsumasa Koyanagi, Alan G. Lewis, Russel A. Martin, Tiao Yuan Huang, John Y. Chen

Research output: Contribution to journal › Article › peer-review

111 Citations (Scopus)

Abstract

Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.

Original language	English
Pages (from-to)	839-844
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	34
Issue number	4
DOIs	https://doi.org/10.1109/T-ED.1987.23004
Publication status	Published - 1987 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1987.23004

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title = "Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's",

abstract = "Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.",

author = "Mitsumasa Koyanagi and Lewis, {Alan G.} and Martin, {Russel A.} and Huang, {Tiao Yuan} and Chen, {John Y.}",

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AU - Koyanagi, Mitsumasa

AU - Lewis, Alan G.

AU - Martin, Russel A.

AU - Huang, Tiao Yuan

AU - Chen, John Y.

PY - 1987/4

Y1 - 1987/4

N2 - Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.

AB - Degradation of device characteristics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.

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Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's

Abstract

ASJC Scopus subject areas

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