Abstract
We have studied hot electron ballistic transport in small four-terminal structures fabricated by Ga focused- ion-beam implantation from AlGaAs/InGaAs/GaAs modulation doped material. We have determined the characteristics of negative bend resistance as a function of hot electron energy by analyzing the magneto-resistance data. We have found that the ballistic nature of hot electrons is progressively lost when the excess energy of hot electrons exceeds LO-phonon energy, although the effect is smaller than in structures fabricated from conventional AlGaAs/GaAs modulation doped material due to the difference in the electron-phonon coupling strength. We have also found that the collimation effect, which is related to the geometry of the electron emitter, is preserved for hot ballistic electrons.
Original language | English |
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Pages (from-to) | 1351-1354 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 34 |
Issue number | 2S |
DOIs | |
Publication status | Published - 1995 Feb |
Externally published | Yes |
Keywords
- Bend resistance
- Collimation
- FIB
- Hot electron
- InGaAs
- Phonon scattering
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)