Hot electron ballistic transport in small four-terminal n-algaas/ingaas/gaas structures

Satoshi Sasaki, Yoshiro Hirayama, Seigo Tarucha

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6 Citations (Scopus)


We have studied hot electron ballistic transport in small four-terminal structures fabricated by Ga focused- ion-beam implantation from AlGaAs/InGaAs/GaAs modulation doped material. We have determined the characteristics of negative bend resistance as a function of hot electron energy by analyzing the magneto-resistance data. We have found that the ballistic nature of hot electrons is progressively lost when the excess energy of hot electrons exceeds LO-phonon energy, although the effect is smaller than in structures fabricated from conventional AlGaAs/GaAs modulation doped material due to the difference in the electron-phonon coupling strength. We have also found that the collimation effect, which is related to the geometry of the electron emitter, is preserved for hot ballistic electrons.

Original languageEnglish
Pages (from-to)1351-1354
Number of pages4
JournalJapanese journal of applied physics
Issue number2S
Publication statusPublished - 1995 Feb
Externally publishedYes


  • Bend resistance
  • Collimation
  • FIB
  • Hot electron
  • InGaAs
  • Phonon scattering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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