Hot carrier reliability of a SiGe/Si hetero-interface in SiGe/Si-hetero-MOSFETs

Toshiaki Tsuchiya, Junichi Murota

Research output: Contribution to conferencePaperpeer-review

Abstract

The density of hetero-interface-traps in a SiGe/Si heterostructure is successfully measured using a newly established charge pumping technique in a SiGe-channel pMOSFET, without interference from the gate oxide interface traps, and a good correlation between the measured density of hetero-interface-traps and the low frequency noise level in drain current flowing in the SiGe-channel is obtained. Moreover, it is experimentally shown that hot carrier degradation occurs in the SiGc/Si heterostructure, and the density of traps generated is estimated using the new charge pumping technique. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.

Original languageEnglish
Pages2120-2124
Number of pages5
Publication statusPublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04/10/1804/10/21

ASJC Scopus subject areas

  • Engineering(all)

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