Abstract
The density of hetero-interface-traps in a SiGe/Si heterostructure is successfully measured using a newly established charge pumping technique in a SiGe-channel pMOSFET, without interference from the gate oxide interface traps, and a good correlation between the measured density of hetero-interface-traps and the low frequency noise level in drain current flowing in the SiGe-channel is obtained. Moreover, it is experimentally shown that hot carrier degradation occurs in the SiGc/Si heterostructure, and the density of traps generated is estimated using the new charge pumping technique. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.
| Original language | English |
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| Pages | 2120-2124 |
| Number of pages | 5 |
| Publication status | Published - 2004 |
| Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 2004 Oct 18 → 2004 Oct 21 |
Other
| Other | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
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| Country | China |
| City | Beijing |
| Period | 04/10/18 → 04/10/21 |
ASJC Scopus subject areas
- Engineering(all)