In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.
|Number of pages||6|
|Journal||IEEE International Reliability Physics Symposium Proceedings|
|Publication status||Published - 2004|
|Event||42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States|
Duration: 2004 Apr 25 → 2004 Apr 29
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