Hot carrier reliability of a SiGe/Si hetero-interface in SiGe MOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

In this paper we report for the first time a mechanism whereby hetero-interface traps are generated by hot carriers in a SiGe/Si heterostructure. The trap density is estimated for SiGe-channel MOSFETs using a newly established elaborate low-temperature charge pumping technique. These results will enable a new level of improvements to the performance and reliability of strained-Si and SiGe devices.

Original languageEnglish
Article number1315370
Pages (from-to)449-454
Number of pages6
JournalIEEE International Reliability Physics Symposium Proceedings
Volume2004-January
Issue numberJanuary
DOIs
Publication statusPublished - 2004
Event42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States
Duration: 2004 Apr 252004 Apr 29

ASJC Scopus subject areas

  • Engineering(all)

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