TY - GEN
T1 - Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis
AU - Koyanagi, M.
AU - Kurino, H.
AU - Kiba, H.
AU - Mori, H.
AU - Hashimoto, T.
AU - Hiruma, Y.
AU - Fujimori, T.
AU - Yamaguchi, Y.
AU - Nishimura, T.
N1 - Publisher Copyright:
© 1991 IEEE.
PY - 1991
Y1 - 1991
N2 - The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.
AB - The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.
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U2 - 10.1109/IEDM.1991.235427
DO - 10.1109/IEDM.1991.235427
M3 - Conference contribution
AN - SCOPUS:84954146329
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 45
EP - 48
BT - International Electron Devices Meeting 1991, IEDM 1991
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Electron Devices Meeting, IEDM 1991
Y2 - 8 December 1991 through 11 December 1991
ER -