Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis

M. Koyanagi, H. Kurino, H. Kiba, H. Mori, T. Hashimoto, Y. Hiruma, T. Fujimori, Y. Yamaguchi, T. Nishimura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-48
Number of pages4
ISBN (Electronic)0780302435
DOIs
Publication statusPublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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