Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis

M. Koyanagi; H. Kurino; H. Kiba; H. Mori; T. Hashimoto; Y. Hiruma; T. Fujimori; Y. Yamaguchi; T. Nishimura

doi:10.1109/IEDM.1991.235427

Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis

M. Koyanagi, H. Kurino, H. Kiba, H. Mori, T. Hashimoto, Y. Hiruma, T. Fujimori, Y. Yamaguchi, T. Nishimura

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.

Original language	English
Title of host publication	International Electron Devices Meeting 1991, IEDM 1991
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45-48
Number of pages	4
ISBN (Electronic)	0780302435
DOIs	https://doi.org/10.1109/IEDM.1991.235427
Publication status	Published - 1991
Externally published	Yes
Event	International Electron Devices Meeting, IEDM 1991 - Washington, United States Duration: 1991 Dec 8 → 1991 Dec 11

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1991-January
ISSN (Print)	0163-1918

Other

Other	International Electron Devices Meeting, IEDM 1991
Country/Territory	United States
City	Washington
Period	91/12/8 → 91/12/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1991.235427

Cite this

Koyanagi, M., Kurino, H., Kiba, H., Mori, H., Hashimoto, T., Hiruma, Y., Fujimori, T., Yamaguchi, Y., & Nishimura, T. (1991). Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis. In International Electron Devices Meeting 1991, IEDM 1991 (pp. 45-48). [235427] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235427

Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis. / Koyanagi, M.; Kurino, H.; Kiba, H. et al.

International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc., 1991. p. 45-48 235427 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1991-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koyanagi, M, Kurino, H, Kiba, H, Mori, H, Hashimoto, T, Hiruma, Y, Fujimori, T, Yamaguchi, Y & Nishimura, T 1991, Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis. in International Electron Devices Meeting 1991, IEDM 1991., 235427, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1991-January, Institute of Electrical and Electronics Engineers Inc., pp. 45-48, International Electron Devices Meeting, IEDM 1991, Washington, United States, 91/12/8. https://doi.org/10.1109/IEDM.1991.235427

Koyanagi M, Kurino H, Kiba H, Mori H, Hashimoto T, Hiruma Y et al. Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis. In International Electron Devices Meeting 1991, IEDM 1991. Institute of Electrical and Electronics Engineers Inc. 1991. p. 45-48. 235427. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1991.235427

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title = "Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis",

abstract = "The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.",

author = "M. Koyanagi and H. Kurino and H. Kiba and H. Mori and T. Hashimoto and Y. Hiruma and T. Fujimori and Y. Yamaguchi and T. Nishimura",

note = "Publisher Copyright: {\textcopyright} 1991 IEEE.; International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",

year = "1991",

doi = "10.1109/IEDM.1991.235427",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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AU - Koyanagi, M.

AU - Kurino, H.

AU - Kiba, H.

AU - Mori, H.

AU - Hashimoto, T.

AU - Hiruma, Y.

AU - Fujimori, T.

AU - Yamaguchi, Y.

AU - Nishimura, T.

PY - 1991

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N2 - The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.

AB - The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.

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Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis

Abstract

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