The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes have been investigated. It has been found that neutral electron-traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to positive threshold shifts by hot-electron injection. It has been demonstrated that such problems are able to be removed by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.
|Number of pages||4|
|Publication status||Published - 1990 Jan 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas