Hot-carrier-immunity degradation in MOSFETs caused by ion-bombardment processes

Koji Kotani, Tadashi Shibata, Tadahiro Ohmi

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes have been investigated. It has been found that neutral electron-traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to positive threshold shifts by hot-electron injection. It has been demonstrated that such problems are able to be removed by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.

Original languageEnglish
Pages311-314
Number of pages4
DOIs
Publication statusPublished - 1990 Jan 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90/8/2290/8/24

ASJC Scopus subject areas

  • Engineering(all)

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