Hot carrier immunity degradation in metal oxide semiconductor field effect transistors caused by ion bombardment processes

Koji Kotani, Tadashi Shibata, Tadahiro Ohmi

Research output: Contribution to journalArticle

Abstract

The degradation in MOS device characteristics as well as in their hot-electron injection immunity caused by ion-bombardment processes has been investigated. It has been found that neutral electron traps were generated due to the charging-up of the gate electrode during ion implantation. These neutral traps contribute to enhanced positive threshold shifts in the following hot-electron injection experiment. It has been demonstrated that such problems can be eliminated by grounding the gate electrode during ion implantation. Similar effects were also observed for a low-energy bias sputtering deposition process.

Original languageEnglish
Pages (from-to)2389-2391
Number of pages3
JournalJapanese journal of applied physics
Volume29
Issue number12
DOIs
Publication statusPublished - 1990 Dec

Keywords

  • Charge-up
  • Hot carrier
  • Hot-carrier immunity
  • Hot-electron injection
  • Ion implantation
  • Ion-bombardment process
  • Low-energy bias sputtering
  • Mos
  • Neutral traps

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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