Hot carrier degradation of SiGe/Si heterointerface and experimental estimation of density of locally generated heterointerface traps

Toshiaki Tsuchiya, Seishi Mishima, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Hot carrier degradation at the interface of nanometer-thick SiGe/Si heterostructures introduced in the channel region of Si metal-oxide- semiconductor field-effect transistors (MPSFETs) was investigated using a recently established low-temperature charge pumping technique. The width of the hot-carrier-damaged heterointerface region was estimated from experimental measurements by investigating and elucidating the low-temperature charge pumping characteristics. Following this, a quantitative estimate of the density of locally generated heterointerface traps was made, and the stress gate voltage dependence of the density was also investigated. Studies of heterointerfaces, such as this, will become more important in order to achieve better performance and higher reliability in future nonclassical devices.

Original languageEnglish
Pages (from-to)5015-5020
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number8 A
DOIs
Publication statusPublished - 2007 Aug 6

Keywords

  • Charge pumping technique
  • Heterointerface trap
  • Hot carrier
  • MOSFET
  • SiGe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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