Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

Takio Kizu, Shinya Aikawa, Toshihide Nabatame, Akihiko Fujiwara, Kazuhiro Ito, Makoto Takahashi, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Original languageEnglish
Article number045702
JournalJournal of Applied Physics
Volume120
Issue number4
DOIs
Publication statusPublished - 2016 Jul 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage'. Together they form a unique fingerprint.

Cite this