TY - JOUR
T1 - Homogeneity improvement of N-polar (000-1) InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane
AU - Shojiki, Kanako
AU - Hanada, Takashi
AU - Tanikawa, Tomoyuki
AU - Imai, Yasuhiko
AU - Kimura, Shigeru
AU - Nonoda, Ryohei
AU - Kuboya, Shigeyuki
AU - Katayama, Ryuji
AU - Matsuoka, Takashi
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/5
Y1 - 2016/5
N2 - To improve the homogeneity of the N-polar (000-1) (%c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE), the growth of GaN and MQW on two c-plane sapphire substrates with an off-cut angle of 0.8° toward the a-plane (sub-A) and the m-plane (sub-M) was performed. The effects of the off-cut direction on the structural properties and surface morphologies of %c-plane GaN films were elucidated. It was found that the step bunching and meandering of %c-plane GaN were significantly suppressed on sub-A. The spatial homogeneity of the %c-plane InGaN/GaN MQWs along the off-cut direction was observed in the submicrometer scale using microbeam X-ray diffraction. By inhibiting the step bunching of the GaN template using sub-A, the thickness homogeneity of the MQWs on sub-A has been significantly improved in comparison with that on sub-M.
AB - To improve the homogeneity of the N-polar (000-1) (%c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE), the growth of GaN and MQW on two c-plane sapphire substrates with an off-cut angle of 0.8° toward the a-plane (sub-A) and the m-plane (sub-M) was performed. The effects of the off-cut direction on the structural properties and surface morphologies of %c-plane GaN films were elucidated. It was found that the step bunching and meandering of %c-plane GaN were significantly suppressed on sub-A. The spatial homogeneity of the %c-plane InGaN/GaN MQWs along the off-cut direction was observed in the submicrometer scale using microbeam X-ray diffraction. By inhibiting the step bunching of the GaN template using sub-A, the thickness homogeneity of the MQWs on sub-A has been significantly improved in comparison with that on sub-M.
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U2 - 10.7567/JJAP.55.05FA09
DO - 10.7567/JJAP.55.05FA09
M3 - Article
AN - SCOPUS:84965047874
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5
M1 - 05FA09
ER -