Homoepitaxial growth of ZnO films with reduced impurity concentrations by helicon-wave-excited-plasma sputtering epitaxy using a crystalline ZnO target prepared by hydrothermal technique

Kentaro Furusawa, Hayato Nakasawa, Yoichi Ishikawa, Shigefusa F. Chichibu

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2 Citations (Scopus)

Abstract

Homoepitaxial growth of reduced donor concentration ZnO films exhibiting atomically smooth surface is demonstrated by helicon-wave-excited-plasma sputtering epitaxy. Using a crystalline ZnO target prepared by hydrothermal method, concentrations of B, C, Cr, Li, and Si in the films underran the detection limits of secondary-ion-mass spectrometry. Consequently, low temperature photoluminescence spectra were dominated by sharp emission peaks originating from the recombination of excitons bound to a neutral Al donor, of which concentration was 2 × 1016cm-3. Nonradiative lifetime dominated the recombination process above 50K, which is most likely due to the presence of lifetime killers such as Ni and Fe.

Original languageEnglish
Article number100301
JournalJapanese journal of applied physics
Volume53
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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