Homo-epitaxial growth of rutile TiO 2 film on step and terrace structured substrate

Y. Yamamoto, Y. Matsumoto, H. Koinuma

Research output: Contribution to journalConference articlepeer-review

33 Citations (Scopus)

Abstract

The atomically finished rutile TiO 2 (101) substrate was obtained by an appropriate surface cleaning and subsequent annealing of commercially available single crystals. The morphology, composition and crystallinity of the ultrasmooth surface were confirmed by an atomic force microscope (AFM), an X-ray photoelectron spectroscopy (XPS) and a reflection-high-energy-electron diffraction (RHEED), respectively. The optimum process for obtaining the ultrasmooth surface was found to be the annealing at the temperature of 700°C for 1h in air after the ultrasonic cleaning immersing in organic solvents and subsequent 20% HF water solution. Furthermore, the homo-epitaxial growth on the ultrasmooth substrate was performed and compared with the hetero-epitaxial growth of TiO 2 film on a stepped α-Al 2 O 3 (101̄2) substrate.

Original languageEnglish
Pages (from-to)189-192
Number of pages4
JournalApplied Surface Science
Volume238
Issue number1-4 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Nov 15
Externally publishedYes
EventAPHYS 2003 - Badajoz, Spain
Duration: 2003 Oct 132003 Oct 18

Keywords

  • Hetero-epitaxial growth
  • Homo-epitaxial growth
  • Rutile
  • Step and terrace
  • TiO (1 0 1)
  • Ultrasmooth surface
  • α-Al O ( 1 0 1̄ 2 )

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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