Hole tunneling properties in resonant tunneling diodes with Si/strained Si0.8Ge0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

Ryota Ito; Masao Sakuraba; Junichi Murota

Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD

Ryota Ito, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publication status	Published - 2006
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: 2006 May 15 → 2006 May 17

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	06/5/15 → 06/5/17

ASJC Scopus subject areas

Computer Science(all)
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Ito, R., Sakuraba, M., & Murota, J. (2006). Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1715981] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD. / Ito, Ryota; Sakuraba, Masao; Murota, Junichi.

Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715981 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ito, R, Sakuraba, M & Murota, J 2006, Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715981, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 06/5/15.

Ito R, Sakuraba M, Murota J. Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715981. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

Ito, Ryota ; Sakuraba, Masao ; Murota, Junichi. / Hole tunneling properties in resonant tunneling diodes with Si/strained Si_0.8Ge_0.2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

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