Abstract
The hysteresis of the capacitance-voltage (C-V) characteristics of an Al2O3/n-GaN metal-insulator-semiconductor structure was evaluated under light (white LED)-irradiation and dark conditions. The hysteresis was not observed under the dark condition but was observed under the light-irradiation condition. The GaN surface was completely depleted in negative bias under the dark condition. The C-V characteristics indicated that the hysteresis is caused by hole trapping under the LED irradiation condition and that the holes are generated in the n-GaN surface by LED irradiation and subsequently injected into the Al2O3 films. When the holes are generated in the depletion region of GaN for any reason, such as a short generation lifetime, they can be trapped in the Al2O3 films.
Original language | English |
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Article number | 8000413 |
Pages (from-to) | 1309-1312 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2017 Sep |
Keywords
- Aluminum oxide
- MOSFET
- gallium nitride
- high-k gate dielectrics
- hole
- interface states
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering