Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition

Akinobu Teramoto, Masaya Saito, Tomoyuki Suwa, Tetsuo Narita, Rihito Kuroda, Shigetoshi Sugawa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The hysteresis of the capacitance-voltage (C-V) characteristics of an Al2O3/n-GaN metal-insulator-semiconductor structure was evaluated under light (white LED)-irradiation and dark conditions. The hysteresis was not observed under the dark condition but was observed under the light-irradiation condition. The GaN surface was completely depleted in negative bias under the dark condition. The C-V characteristics indicated that the hysteresis is caused by hole trapping under the LED irradiation condition and that the holes are generated in the n-GaN surface by LED irradiation and subsequently injected into the Al2O3 films. When the holes are generated in the depletion region of GaN for any reason, such as a short generation lifetime, they can be trapped in the Al2O3 films.

Original languageEnglish
Article number8000413
Pages (from-to)1309-1312
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2017 Sep


  • Aluminum oxide
  • gallium nitride
  • high-k gate dielectrics
  • hole
  • interface states

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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