Hole trapping in amorphous HfO2 and Al2O3 as a source of positive charging

Jack Strand, Oliver A. Dicks, Moloud Kaviani, Alexander L. Shluger

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Density Functional Theory (DFT) calculations demonstrate that holes can trap in crystalline and amorphous HfO2 and Al2O3 in both single- and bipolaron states. Polarons in the crystalline phase have small trapping energies of the order of 0.2 eV. In the amorphous phase, structural precursor sites cause deep hole trapping with trapping energies exceeding 1.2 eV making these states likely candidates for positive charging in oxide films.

    Original languageEnglish
    Pages (from-to)235-239
    Number of pages5
    JournalMicroelectronic Engineering
    Volume178
    DOIs
    Publication statusPublished - 2017 Jun 25

    Keywords

    • Amorphous AlO
    • Amorphous HfO
    • Density Functional Theory
    • Positive charging
    • Thin films

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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