Hole reduction and electron accumulation in YBa2Cu 3Oy thin films using an electrochemical technique: Evidence for an n-type metallic state

T. Nojima, H. Tada, S. Nakamura, N. Kobayashi, H. Shimotani, Y. Iwasa

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We demonstrated extreme hole reduction and electron accumulation in YBa2Cu3Oy films by an electrochemical technique. Following the transition from superconductor to insulator, we succeeded in doping electrons as evidenced by the decrease in resistivity and sign change of the Hall coefficient. Further doping resulted in metallic n-type YBa2Cu3Oy with a carrier density of ∼2.5 × 1020 cm-3, but without any sign of superconductivity. The oxygen vacancies electrochemically induced in the CuO2 planes played a major role in the p-n transition.

Original languageEnglish
Article number020502
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number2
DOIs
Publication statusPublished - 2011 Jul 11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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