Hole mobility in Si(110) p-MOS transistors

P. Gaubert, A. Teramoto, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The mobility in MOSFETs is one of the most important parameter and the need to model it into an efficient and user-friendly model has been a necessity. The most common and widely used way is to define two parameters, the low field mobility μ0 and the mobility attenuation factor θ. However, this simple model cannot be used in the case of p-MOSFETs fabricated on (110) silicon-oriented wafers since not only the surface roughness scattering but also the Coulomb and the phonon scattering mechanism must be taken into account into the model. Then, a new model has been developed to fit perfectly the hole mobility in these transistors, introducing a quadratic attenuation factor θ2 as well as a Coulomb scattering coefficient α in addition to the usual low field mobility μ0 and the conventional attenuation factor, renamed θ1.

Original languageEnglish
Title of host publicationECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
Pages7-12
Number of pages6
Edition40
DOIs
Publication statusPublished - 2009 Nov 23
EventSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
Duration: 2008 Oct 122008 Oct 17

Publication series

NameECS Transactions
Number40
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSolid State - General - 214th ECS Meeting/RRiME 2008
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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