Hole mobility enhancement in strained SiGe grown on silicon-on-insulator p-MOSFETs

Seong Je Kim, Ji Young Baek, Tae Hun Shim, Hun Joo Lee, Jea Gun Park, Kwan Su Kim, Won Ju Cho

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The hole mobility of p-metal-oxide-semiconductor field-effect transistors (MOSFETs) with a compressively-strained SiGe channel grown on a silicon-on-insulator (SOI) structure was investigated. In particular, the dependence of the mobility behavior on the effective field (Ee f f) was investigated by varying the Ge concentration in the SiGe layer. We observed that the mobility enhancement factor increased with both the Ge concentration and the Ee f f- In addition, we confirmed that the hole mobility enhancement factor caused by the compressively-strained SiGe channel grown on a SOI structure persisted in the higher Ee f f range and that it was higher than that of the silicon channel structure. This was due to the fact that the strain and the confinement effects both work to maintain a constant energetic splitting between the heavy hole and the light hole bands.

Original languageEnglish
Pages (from-to)2171-2174
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number4
DOIs
Publication statusPublished - 2008 Oct
Externally publishedYes

Keywords

  • Compressively-strained SiGe
  • Ge concentration
  • Hole mobility
  • Relaxed SiGe
  • UHVCVD

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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