Abstract
The hole mobility of p-metal-oxide-semiconductor field-effect transistors (MOSFETs) with a compressively-strained SiGe channel grown on a silicon-on-insulator (SOI) structure was investigated. In particular, the dependence of the mobility behavior on the effective field (Ee f f) was investigated by varying the Ge concentration in the SiGe layer. We observed that the mobility enhancement factor increased with both the Ge concentration and the Ee f f- In addition, we confirmed that the hole mobility enhancement factor caused by the compressively-strained SiGe channel grown on a SOI structure persisted in the higher Ee f f range and that it was higher than that of the silicon channel structure. This was due to the fact that the strain and the confinement effects both work to maintain a constant energetic splitting between the heavy hole and the light hole bands.
Original language | English |
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Pages (from-to) | 2171-2174 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2008 Oct |
Externally published | Yes |
Keywords
- Compressively-strained SiGe
- Ge concentration
- Hole mobility
- Relaxed SiGe
- UHVCVD
ASJC Scopus subject areas
- Physics and Astronomy(all)