Hole mobility behavior in strained SiGe-n-SOI p-MOSFETs

Tae Hun Shim, Seong Je Kim, Gon Sub Lee, Kwan Su Kim, Won Ju Cho, Jea Gun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A compressive strained SiGe channel grown-on-SOI structure which can be applicable to next generation high performance CMOSs was applied to p-MOSFETs. The mobility behavior depending on effective fields, Eeff, was investigated by varying Ge concentrations in the SiGe layer. We confirmed that the mobility enhancement factor increases with both Ge concentration and E eff, and quite depends on Eeff. In particular, we demonstrated that hole mobility enhancement factor at the effective fields of 0.13 MV/cm amounted to 1.51 for 34 at% Ge. In addition, we observed that the strain of 0.23 induced by 56.5-at% Ge concentration in SiGe grown-on-SOI structure could not increase hole mobility at the effective fields range from 0.05 to 0.13 MV/cm because of high density of dislocations.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages345-350
Number of pages6
Edition1
DOIs
Publication statusPublished - 2008 Nov 14
Externally publishedYes
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Shim, T. H., Kim, S. J., Lee, G. S., Kim, K. S., Cho, W. J., & Park, J. G. (2008). Hole mobility behavior in strained SiGe-n-SOI p-MOSFETs. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 345-350). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911516