Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States

Tohru Higuchi, Asuka Oda, Takashi Tsuchiya, Takaaki Suetsugu, Naoya Suzuki, Shohei Yamaguchi, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira

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3 Citations (Scopus)

Abstract

An in-plane-oriented BaPrO 3-δ thin film with mixed valence states has been prepared on an Al 2 O 3 (0001) substrate by RF magnetron sputtering. With increasing crystallization temperature (T sub ), the lattice constant decreases and the orientation changes from the a-axis to the b-axis. The thin film prepared above T sub = 800 °C exhibits a higher proton conductivity than bulk ceramics. The conductivity below 400 °C decreases with oxygen gas partial pressure, indicating the existence of hole-ion mixed conduction. The valence band consists of O 2p states hybridized with the Pr 4+ (4f 0 ) and Pr 3+ (4 f 1 L) states, which are closely related to the mixed conduction. The energy difference between the top of the valence band and the Fermi level corresponds to the activation energy of holes for the total conductivity below 400 °C.

Original languageEnglish
Article number114708
Journaljournal of the physical society of japan
Volume84
Issue number11
DOIs
Publication statusPublished - 2015 Nov 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Higuchi, T., Oda, A., Tsuchiya, T., Suetsugu, T., Suzuki, N., Yamaguchi, S., Minohara, M., Kobayashi, M., Horiba, K., & Kumigashira, H. (2015). Hole-ion Mixed Conduction of Orientation-Controlled BaPrO3-δ Thin Film with Mixed Valence States. journal of the physical society of japan, 84(11), [114708]. https://doi.org/10.7566/JPSJ.84.114708