@inproceedings{6f5f8050df9d4c8b8d06ff1ec9be8989,
title = "HiSIM-DG for extracting statistical variations of measured I-V characteristics",
abstract = "We have developed the double gate (DG)-MOSFET model HiSIM-DG based on the complete surface-potential-based description valid both for the symmetrical and the asymmetrical independent gate structures. HiSIM-DG is verified to reproduce measurement results for any geometries as well as for statistical variabilities. It is found that the reason for the observed channel-length dependence of the different device-performance variations can be explaned by considering the silicon-layer-thickness variations.",
keywords = "Asymmetry, Dg-mosfet, Symmetry, Variations",
author = "Y. Shintaku and H. Ichimiya and M. Miura-Mattausch and K. Endo and S. O'Uchi and M. Masahara",
year = "2011",
month = nov,
day = "23",
language = "English",
isbn = "9781439871393",
series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
pages = "772--775",
booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",
}