HiSIM-DG for extracting statistical variations of measured I-V characteristics

Y. Shintaku, H. Ichimiya, M. Miura-Mattausch, K. Endo, S. O'Uchi, M. Masahara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have developed the double gate (DG)-MOSFET model HiSIM-DG based on the complete surface-potential-based description valid both for the symmetrical and the asymmetrical independent gate structures. HiSIM-DG is verified to reproduce measurement results for any geometries as well as for statistical variabilities. It is found that the reason for the observed channel-length dependence of the different device-performance variations can be explaned by considering the silicon-layer-thickness variations.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages772-775
Number of pages4
Publication statusPublished - 2011 Nov 23
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 2011 Jun 13 → 2011 Jun 16

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period11/6/13 → 11/6/16

Keywords

  • Asymmetry
  • Dg-mosfet
  • Symmetry
  • Variations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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