Hillock growth at the surface of Pt/TiN electrodes for ferroelectric capacitors during annealing in N2/O2 ambient

Hideo Miura, Y. Kumagai, Y. Fujisaki

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

The hillock growth mechanism at the surface of Pt/TiN electrodes is investigated. TEM and SEM observations confirm that local delamination occurs at the Pt/TiN interface first, and then, plastic deformation of the Pt films under compressive stress forms hollow domes, which result in hillocks. Hillocks always start to grow when the internal stress in the Pt films reaches about -1000 MPa during annealing in N2/O2 ambient. Since the initial internal stress of Pt thin films varies from -500 to 500 MPa, depending on their deposition temperature, the hillock growth temperature strongly depends on the deposition temperature of the Pt films. It is very important, therefore, to control the initial internal stress in Pt films in order to eliminate hillock growth at the surface of Pt/TiN electrodes.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume493
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 1997 Nov 301997 Dec 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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