High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Nitride in a Carbon Monoxide‐Carbon Dioxide Atmosphere

Takayuki Narushima, Takashi Goto, Jun Hagiwara, Yasutaka Iguchi, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Oxidation behavior of chemically vapor‐deposited silicon nitride (CVD‐Si3N4) in CO─CO2 atmospheres between 1823 and 1923 K was investigated using a thermogravimetric technique. Mass loss of Si3N4 (active oxidation) was observed in a region of PCO2/PCO < 1, while mass gain (passive oxidation) was observed at around PCO2PCO= 10. In the active oxidation region below PCO2PCO= 10 –4, carbon particles were formed on the Si3N4 surface as an oxidation product, and the mass‐loss rates were independent of PCO2/PCO In the active oxidation region above PCO2/PCO= 10–4 the mass‐loss rates decreased with increasing PCO2/Pco. The critical PCO2/PCO value from the active to passive oxidation was 2 orders of magnitude larger than the calculated value predicted from the Wagner model.

Original languageEnglish
Pages (from-to)2921-2925
Number of pages5
JournalJournal of the American Ceramic Society
Volume77
Issue number11
DOIs
Publication statusPublished - 1994 Nov

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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