Abstract
The oxidation of chemically vapor‐deposited SiC in wet O2 (water vapor partial pressure = 0.01 MPa, total pressure = 0.1 MPa) was examined using a thermogravimetric technique in the temperature range of 1823 to 1923 K. The oxidation kinetics follow a linear‐parabolic relationship over the entire temperature range. The activation energies of linear and parabolic rate constants were 428 and 397 kJ · mol−1, respectively. The results suggested that the rate‐controlling step is a chemical reaction at an SiC/SiO2 interface in the linear oxidation regime, and the rate‐controlling step is an oxygen diffusion process through the oxide film (cristobalite) in the parabolic oxidation regime.
Original language | English |
---|---|
Pages (from-to) | 3580-3584 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 73 |
Issue number | 12 |
DOIs | |
Publication status | Published - 1990 Dec |
Keywords
- chemical vapor deposition
- oxidation
- silicon carbide
- water, kinetics
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry