High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen at 1823 to 1923 K

Takayuki Narushima, Takashi Goto, Yasutaka Iguchi, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

78 Citations (Scopus)

Abstract

The oxidation of chemically vapor‐deposited SiC in wet O2 (water vapor partial pressure = 0.01 MPa, total pressure = 0.1 MPa) was examined using a thermogravimetric technique in the temperature range of 1823 to 1923 K. The oxidation kinetics follow a linear‐parabolic relationship over the entire temperature range. The activation energies of linear and parabolic rate constants were 428 and 397 kJ · mol−1, respectively. The results suggested that the rate‐controlling step is a chemical reaction at an SiC/SiO2 interface in the linear oxidation regime, and the rate‐controlling step is an oxygen diffusion process through the oxide film (cristobalite) in the parabolic oxidation regime.

Original languageEnglish
Pages (from-to)3580-3584
Number of pages5
JournalJournal of the American Ceramic Society
Volume73
Issue number12
DOIs
Publication statusPublished - 1990 Dec

Keywords

  • chemical vapor deposition
  • oxidation
  • silicon carbide
  • water, kinetics

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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