High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO─CO2 Atmosphere

Takayuki Narushima, Takashi Goto, Yoshio Yokoyama, Yasutaka Iguchi, Toshio Hirai

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Active oxidation behavior of CVD‐SiC in CO─CO2 atmospheres was investigated using a thermogravimetric technique in the temperature range between 1823 and 1923 K. The gas pressure ratio, PCO2/PCO, was controlled between 10−4 and 10−1 at 0.1 MPa. Active oxidation rates (mass loss rates) showed maxima at a certain value of PCO2/PCO, (PCO2/PCO)*, In a PCO2/PCO region lower than the (PCO2/PCO)* a carbon layer was formed on the SiC surface. In a PCO2/PCO region higher than the (PCO2/PCO)*, silica particles or a porous silica layer was observed on the SiC surface.

Original languageEnglish
Pages (from-to)2521-2524
Number of pages4
JournalJournal of the American Ceramic Society
Volume76
Issue number10
DOIs
Publication statusPublished - 1993 Oct

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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