High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere

Takayuki Narushima, Takashi Goto, Yasutaka Iguchi, Toshio Hirai

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

Active oxidation behavior of chemically vapor‐deposited silicon carbide in an Ar─O2 atmosphere at 0.1 MPa was examined in the temperature range between 1840 and 1923 K. The transition from active oxidation (mass loss) to passive oxidation (mass gain) was observed at certain distinct oxygen partial pressures (PO2t). The values of PO2t increased with increasing temperature and with decreasing total gas flow rates. This behavior was well explained by Wagner's model and thermodynamic calculations. Active oxidation rates (ka) increased with increasing O2 partial pressures and total gas flow rates. The rate‐controlling step of the active oxidation was concluded to be O2 diffusion through the gaseous boundary layer.

Original languageEnglish
Pages (from-to)2583-2586
Number of pages4
JournalJournal of the American Ceramic Society
Volume74
Issue number10
DOIs
Publication statusPublished - 1991 Jan 1

Keywords

  • chemical vapor deposition
  • kinetics
  • oxidation
  • pressure
  • silicon carbide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O<sub>2</sub> Atmosphere'. Together they form a unique fingerprint.

  • Cite this