Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

Y. X. Liu, T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, M. Masahara

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (1 0 0) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.

Original languageEnglish
Article number9898
Pages (from-to)290-293
Number of pages4
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 2015 Nov 1
Externally publishedYes

Keywords

  • Body effect factor
  • FinFET
  • SOTB
  • Threshold voltage (V)
  • Triangular fin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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