Highly stable device characteristics of InP-based enhancement-mode high electron mobility transistors with two-step-recessed gates

Tetsuya Suemitsu, Haruki Yokoyama, Yohtaro Umeda, Takatomo Enoki, Yasunobu Ishii

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-performance 0.1-μm-gate InP-based enhancement-mode high electron mobility transistors (E-HEMTs) were fabricated using two-step-recessed-gate technology, where the gate recess etching is first carried out by wet-chemical etching to removed n+-cap layers and then by Ar plasma etching to remove the InP etch stopper layer. Etching selectivies for both steps are sufficient not to degrade the uniformity of the device characteristics. The main advantage over the conventional approach for E-HEMTs, Pt-based-gate technology, is the fact that the stability of the threshold voltage is improved by means of a refractory gate metal, WSiN. The change in the threshold voltage is only 50mV after 160-h bias and thermal stress at 195°C.

Original languageEnglish
Pages (from-to)1174-1177
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number2 B
Publication statusPublished - 1999 Dec 1
Externally publishedYes

Keywords

  • HEMT
  • InAlAs
  • InGaAs
  • InP

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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