Highly spin-polarized full-Heusler alloy films and their application to spin-electronics devices

Kay Yakushiji, Koki Takanashi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The recent development of the study on half-metallic full-Heusler alloy thin films and their application to spin-electronics devices are reviewed. The progress of preparation technique of Co-based full-Heusler alloy films with high L21 structural order has made it possible to obtain higher spin-polarization than that of typical transition metals and alloys (Co, CoFe, etc.). Resulting tunnel magnetoresistance in magnetic tunnel junctions exceeds 60% at room temperature. Our recent results on the current-perpendicular-to- plane magnetoresistance (CPP-GMR) devices with Co2MnSi films are also shown. The resistance change-area product (ΔRA) at room temperature was 19 mΩμ2, which is one order of magnitude larger than those in previously reported trilayer systems, resulting in the MR ratio of 24%. The enhanced ΔRA is considered to originate from the large spin polarization in a high-quality L21 Co2MnSi film.

Original languageEnglish
Pages (from-to)700-705
Number of pages6
JournalShinku/Journal of the Vacuum Society of Japan
Volume49
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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