Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

Hideaki Ebata; Takafumi Izawa; Eigo Miyazaki; Kazuo Takimiya; Masaaki Ikeda; Hirokazu Kuwabara; Tatsuto Yui

doi:10.1021/ja074841i

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

Hideaki Ebata, Takafumi Izawa, Eigo Miyazaki, Kazuo Takimiya, Masaaki Ikeda, Hirokazu Kuwabara, Tatsuto Yui

Research output: Contribution to journal › Article › peer-review

722 Citations (Scopus)

Abstract

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO₂ substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm² V^-1 s^-1 and I_on/I_off of ∼10⁷.

Original language	English
Pages (from-to)	15732-15733
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	129
Issue number	51
DOIs	https://doi.org/10.1021/ja074841i
Publication status	Published - 2007 Dec 26
Externally published	Yes

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja074841i

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Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors. / Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto.

In: Journal of the American Chemical Society, Vol. 129, No. 51, 26.12.2007, p. 15732-15733.

Research output: Contribution to journal › Article › peer-review

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abstract = "2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of ∼107.",

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AU - Ikeda, Masaaki

AU - Kuwabara, Hirokazu

AU - Yui, Tatsuto

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