Highly sensitive pressure sensor with silicon-on-nothing (SON) MOSFET for sensor integrated heterogeneous system

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MOSFETs have the potential to be-come a highly sensitive pressure sensor compared with conventional piezoresistive device such as doped Si. In this study, we have proposed a novel pressure sensor composed of silicon-on-nothing (SON) MOSET. It was clearly indicated that the SON-MOSFET had high gauge factor of 230 which was more than twice as high as conventional values. These results expedite developments and realization of sensor integrated heterogeneous system.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages186-187
Number of pages2
ISBN (Electronic)9781509007264
DOIs
Publication statusPublished - 2016 Sep 27
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 2016 Jun 122016 Jun 13

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Other

Other21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
CountryUnited States
CityHonolulu
Period16/6/1216/6/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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