Highly selective reactive-ion etching using CO/NH3/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe-Ni

Takashi Abe, Youn Gi Hong, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

A new etching technology was developed for micro/nanofabrication of 20% Fe-Ni, Au, Pt, and Cu. The etch selectivity of these metals with respect to titanium is such that titanium may be used, not only as a masking material, but also as an etch-stop layer. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in CO/NH3/Xe plasmas.

Original languageEnglish
Pages (from-to)2159-2162
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
Publication statusPublished - 2003 Sep 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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