Highly selective reactive-ion etching using CO/NH3/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe-Ni

Takashi Abe; Youn Gi Hong; Masayoshi Esashi

Highly selective reactive-ion etching using CO/NH₃/Xe gases for microstructuring of Au, Pt, Cu, and 20% Fe-Ni

Takashi Abe, Youn Gi Hong, Masayoshi Esashi

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A new etching technology was developed for micro/nanofabrication of 20% Fe-Ni, Au, Pt, and Cu. The etch selectivity of these metals with respect to titanium is such that titanium may be used, not only as a masking material, but also as an etch-stop layer. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in CO/NH₃/Xe plasmas.

Original language	English
Pages (from-to)	2159-2162
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	5
Publication status	Published - 2003 Sep 1

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A new etching technology was developed for micro/nanofabrication of 20% Fe-Ni, Au, Pt, and Cu. The etch selectivity of these metals with respect to titanium is such that titanium may be used, not only as a masking material, but also as an etch-stop layer. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in CO/NH3/Xe plasmas.",

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AU - Abe, Takashi

AU - Hong, Youn Gi

AU - Esashi, Masayoshi

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N2 - A new etching technology was developed for micro/nanofabrication of 20% Fe-Ni, Au, Pt, and Cu. The etch selectivity of these metals with respect to titanium is such that titanium may be used, not only as a masking material, but also as an etch-stop layer. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in CO/NH3/Xe plasmas.

AB - A new etching technology was developed for micro/nanofabrication of 20% Fe-Ni, Au, Pt, and Cu. The etch selectivity of these metals with respect to titanium is such that titanium may be used, not only as a masking material, but also as an etch-stop layer. The titanium can be used both as a mask for the sputter etching of noble metals and as a mask for the reactive-ion etching of magnetic metals in CO/NH3/Xe plasmas.

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