TY - JOUR
T1 - Highly selective low-damage processes using advanced neutral beams for porous low- k films
AU - Ohtake, Hiroto
AU - Inoue, Nobuhiko
AU - Ozaki, Takuya
AU - Samukawa, Seiji
AU - Soda, Eiichi
AU - Inukai, Kazuaki
PY - 2005
Y1 - 2005
N2 - A highly selective and low-damage damascene process for porous methyl-silsesquioxane (porous MSQ, k-2.2) films has been realized using a neutral beam system we have developed. Use of a SF6 or CF4 neutral beam enables etching of porous MSQ with higher selectivity to the photoresist than what can be obtained in a conventional plasma. This is considered to be because the neutral beam eliminates exposure to ultraviolet (UV) light which enhances the resist etching. Anisotropic, low-dimension-shift damascene etching of porous MSQ is achieved through the neutral beam system. In addition, an O2 neutral beam reduces damage to the sidewall of porous MSQ during the resist ashing process. Also, a modified layer generated on porous MSQ during ashing using a H2 or H2 N2 beam could prevent damage by UV light, which allows more effective resist ashing in a dual damascene structure of porous MSQ. Accordingly, this neutral beam system is a promising candidate for use in porous MSQ damascene processes.
AB - A highly selective and low-damage damascene process for porous methyl-silsesquioxane (porous MSQ, k-2.2) films has been realized using a neutral beam system we have developed. Use of a SF6 or CF4 neutral beam enables etching of porous MSQ with higher selectivity to the photoresist than what can be obtained in a conventional plasma. This is considered to be because the neutral beam eliminates exposure to ultraviolet (UV) light which enhances the resist etching. Anisotropic, low-dimension-shift damascene etching of porous MSQ is achieved through the neutral beam system. In addition, an O2 neutral beam reduces damage to the sidewall of porous MSQ during the resist ashing process. Also, a modified layer generated on porous MSQ during ashing using a H2 or H2 N2 beam could prevent damage by UV light, which allows more effective resist ashing in a dual damascene structure of porous MSQ. Accordingly, this neutral beam system is a promising candidate for use in porous MSQ damascene processes.
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U2 - 10.1116/1.1849219
DO - 10.1116/1.1849219
M3 - Article
AN - SCOPUS:28644435943
VL - 23
SP - 210
EP - 216
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
SN - 1071-1023
IS - 1
ER -