A highly selective and low-damage damascene process for porous methyl-silsesquioxane (porous MSQ, k-2.2) films has been realized using a neutral beam system we have developed. Use of a SF6 or CF4 neutral beam enables etching of porous MSQ with higher selectivity to the photoresist than what can be obtained in a conventional plasma. This is considered to be because the neutral beam eliminates exposure to ultraviolet (UV) light which enhances the resist etching. Anisotropic, low-dimension-shift damascene etching of porous MSQ is achieved through the neutral beam system. In addition, an O2 neutral beam reduces damage to the sidewall of porous MSQ during the resist ashing process. Also, a modified layer generated on porous MSQ during ashing using a H2 or H2 N2 beam could prevent damage by UV light, which allows more effective resist ashing in a dual damascene structure of porous MSQ. Accordingly, this neutral beam system is a promising candidate for use in porous MSQ damascene processes.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering