Highly Selective and Highly Anisotropic S i O2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma

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Abstract

A 10–100 µ s modulated electron cyclotron resonance (ECR) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF2 radicals to F atoms in the CHF3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10–100 µ s). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO2 etching selectivity to Si etching and eliminates microloading effects during SiO2 contact hole etching.

Original languageEnglish
Pages (from-to)2133
Number of pages1
JournalJapanese journal of applied physics
Volume33
Issue number4S
DOIs
Publication statusPublished - 1994 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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