Highly Selective and Highly Anisotropic S i O2 Etching in Pulse-Time Modulated Electron Cyclotron Resonance Plasma

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Abstract

A 10–100 µ s modulated electron cyclotron resonance (ECR) plasma is discharged to control the generation of reactive species in high-density, low-pressure plasma. The density ratio of CF2 radicals to F atoms in the CHF3 plasma correlates well with the pulse duration. This is because the generation of reactive species in the ECR plasma depends on time (10–100 µ s). Moreover, we found that a collimated ion flux was generated in the pulsed plasma. This method achieves a high ratio of SiO2 etching selectivity to Si etching and eliminates microloading effects during SiO2 contact hole etching.

Original languageEnglish
Number of pages1
JournalJapanese journal of applied physics
Volume33
Issue number4S
DOIs
Publication statusPublished - 1994 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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