Highly selective and high rate SiO2 etching using argon-added C2F4/CF3I plasma

H. Ohtake, H. Ishihara, T. Fuse, A. Koshiishi, S. Samukawa

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A high SiO2 etch rate and extremely high etch selectivity to photoresist were achieved in C2F4/CF3I/Ar plasma using the conventional RIE system. The SiO2 etch rate did not decrease as a result of adding Ar. On the other hand, the etch selectivity to the photoresist was significantly increased. Using C2F4/CF3I/Ar, a high-aspect ratio SiO2 contact etch was achieved in a conventional dual-frequency RIE etching system. The reason for the high selectivity in C2F4/CF3I/Ar is the high C/F ratio film deposited by C2F4/CF3I, and this C/F ratio was significantly increased by Ar dilution and ion bombardment.

Original languageEnglish
Pages (from-to)2142-2146
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number5
Publication statusPublished - 2003 Sep 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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