A high SiO2 etch rate and extremely high etch selectivity to photoresist were achieved in C2F4/CF3I/Ar plasma using the conventional RIE system. The SiO2 etch rate did not decrease as a result of adding Ar. On the other hand, the etch selectivity to the photoresist was significantly increased. Using C2F4/CF3I/Ar, a high-aspect ratio SiO2 contact etch was achieved in a conventional dual-frequency RIE etching system. The reason for the high selectivity in C2F4/CF3I/Ar is the high C/F ratio film deposited by C2F4/CF3I, and this C/F ratio was significantly increased by Ar dilution and ion bombardment.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2003 Sep 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering